? semiconductor components industries, llc, 2004 june, 2004 ? rev. 2 1 publication order number: 2n6426/d 2n6426*, 2n6427 preferred device darlington transistors npn silicon features ? pb?free packages are available** ? device marking: device type, e.g., 2n6426, date code maximum ratings rating symbol value unit collector ? emitter voltage v ceo 40 vdc collector ? base voltage v cbo 40 vdc emitter ? base voltage v ebo 12 vdc collector current ? continuous i c 500 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 w mw/ c operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. thermal characteristics characteristic symbol max unit thermal resistance, junction?to?ambient r ja 200 c/w thermal resistance, junction?to?case r jc 83.3 c/w **for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. to?92 case 29 style 1 *preferred devices are recommended choices for future use and best overall value. marking diagram 2n 642x yww see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information http://onsemi.com collector 3 base 2 emitter 1 1 2 3 642x specific device code y = year ww = work week
2n6426*, 2n6427 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage, (note 1) (i c = 10 madc, v be = 0) v (br)ceo 40 ? ? vdc collector ?base breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 40 ? ? vdc emitter ?base breakdown voltage (i e = 10 adc, i c = 0) v (br)ebo 12 ? ? vdc collector cutoff current (v ce = 25 vdc, i b = 0) i ces ? ? 1.0 adc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo ? ? 50 nadc emitter cutoff current (v eb = 10 vdc, i c = 0) i ebo ? ? 50 nadc on characteristics dc current gain, (note 1) (i c = 10 madc, v ce = 5.0 vdc) 2n6426 2n6427 (i c = 100 madc, v ce = 5.0 vdc) 2n6426 2n6427 (i c = 500 madc, v ce = 5.0 vdc) 2n6426 2n6427 h fe 20,000 10,000 30,000 20,000 20,000 14,000 ? ? ? ? ? ? 200,000 100,000 300,000 200,000 200,000 140,000 ? collector ?emitter saturation voltage (i c = 50 madc, i b = 0.5 madc) (i c = 500 madc, i b = 0.5 madc v ce(sat) ? ? 0.71 0.9 1.2 1.5 vdc base ?emitter saturation voltage (i c = 500 madc, i b = 0.5 madc) v be(sat) ? 1.52 2.0 vdc base ?emitter on voltage (i c = 50 madc, v ce = 5.0 vdc) v be(on) ? 1.24 1.75 vdc small?signal characteristics output capacitance (v cb = 10 vdc, i e = 0, f = 1.0 mhz) c obo ? 5.4 7.0 pf input capacitance (v eb = 1.0 vdc, i c = 0, f = 1.0 mhz) c ibo ? 10 15 pf input impedance (i c = 10 madc, v ce = 5.0 vdc, f = 1.0 khz) 2n6426 2n6427 h ie 100 50 ? ? 2000 1000 k small?signal current gain (i c = 10 madc, v ce = 5.0 vdc, f = 1.0 khz) 2n6426 2n6427 h fe 20,000 10,000 ? ? ? ? ? current ?gain ? high frequency (i c = 10 madc, v ce = 5.0 vdc, f = 100 mhz) 2n6426 2n6427 |h fe | 1.5 1.3 2.4 2.4 ? ? ? output admittance (i c = 10 madc, v ce = 5.0 vdc, f = 1.0 khz) h oe ? ? 1000 mhos noise figure (i c = 1.0 madc, v ce = 5.0 vdc, r s = 100 k , f = 1.0 khz) nf ? 3.0 10 db 1. pulse test: pulse width 300 s; duty cycle 2.0%.
2n6426*, 2n6427 http://onsemi.com 3 r s i n e n ideal transistor figure 1. transistor noise model noise characteristics (v ce = 5.0 vdc, t a = 25 c) figure 2. noise voltage f, frequency (hz) 50 100 200 500 20 figure 3. noise current f, frequency (hz) figure 4. total wideband noise voltage r s , source resistance (k ) figure 5. wideband noise figure r s , source resistance (k ) 5.0 50 70 100 200 30 10 20 1.0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 bandwidth = 1.0 hz r s 0 i c = 1.0 ma 100 a 10 a bandwidth = 1.0 hz i c = 1.0 ma 100 a 10 a e n , noise voltage (nv) i n , noise current (pa) 2.0 5.0 10 20 50 100 200 500 1000 bandwidth = 10 hz to 15.7 khz i c = 10 a 100 a 1.0 ma 8.0 10 12 14 6.0 0 4.0 1.0 2.0 5.0 10 20 50 100 200 500 1000 2.0 bandwidth = 10 hz to 15.7 khz 10 a 100 a i c = 1.0 ma v t , total wideband noise voltage (nv) nf, noise figure (db) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k
2n6426*, 2n6427 http://onsemi.com 4 small?signalcharacteristics figure 6. capacitance v r , reverse voltage (volts) 5.0 7.0 10 20 3.0 figure 7. high frequency current gain i c , collector current (ma) figure 8. dc current gain i c , collector current (ma) figure 9. collector saturation region i b , base current ( a) 2.0 200k 5.0 0.04 4.0 2.0 1.0 0.8 0.6 0.4 0.2 t j = 25 c c, capacitance (pf) 1.5 2.0 2.5 3.0 1.0 0.5 |h fe |, small-signal current gain h fe , dc current gain v ce , collector-emitter voltage (volts) 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 c ibo c obo 0.5 1.0 2.0 0.5 10 20 50 100 200 500 v ce = 5.0 v f = 100 mhz t j = 25 c 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k 7.0 10 20 30 50 70 100 200 300 500 t j = 125 c 25 c -55 c v ce = 5.0 v 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000 t j = 25 c i c = 10 ma 50 ma 250 ma 500 ma figure 10. aono voltages i c , collector current (ma) figure 11. temperature coefficients i c , collector current (ma) 1.6 5.0 -1.0 v, voltage (volts) 1.4 1.2 1.0 0.8 0.6 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 r v , temperature coefficients (mv/ c) q t j = 25 c v be(on) @ v ce = 5.0 v v ce(sat) @ i c /i b = 1000 -2.0 -3.0 -4.0 -5.0 -6.0 5.0 7.0 10 20 30 50 70 100 200 300 500 25 c to 125 c -55 c to 25 c *r vc for v ce(sat) vb for v be 25 c to 125 c -55 c to 25 c *applies for i c /i b h fe /3.0
2n6426*, 2n6427 http://onsemi.com 5 figure 12. thermal response t, time (ms) 1.0 2.0 5.0 1.0 0.5 0.2 0.1 resistance (normalized) 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 20 50 10 200 500 100 1.0k 2.0k 5.0k 10k figure 13. active region safe operating area v ce , collector-emitter voltage (volts) 1.0k 0.4 700 500 300 200 100 70 50 30 20 10 0.6 1.0 2.0 4.0 6.0 10 20 40 i c , collector current (ma) t a = 25 c d = 0.5 0.2 0.1 0.05 single pulse single pulse current limit thermal limit second breakdown limit z jc(t) = r(t) ? r jc t j(pk) - t c = p (pk) z jc(t) z ja(t) = r(t) ? r ja t j(pk) - t a = p (pk) z ja(t) 1.0 ms 100 s t c = 25 c 1.0 s design note: use of transient thermal resistance data figure a t p p p p p t 1 1/f dutycycle t 1 f t 1 t p peak pulse power = p p ordering information device package shipping 2 2n6426 to?92 5,000 units / box 2n6426g to?92 (pb?free) 5,000 units / box 2N6426RLRA to?92 2,000 / tape & reel 2n6427 to?92 5,000 units / box 2n6427rlra to?92 2,000 / tape & reel 2n6427rlrag to?92 (pb?free) 2,000 / tape & reel 2for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
2n6426*, 2n6427 http://onsemi.com 6 package dimensions to?92 to?226aa case 29?11 issue al notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 2n6426/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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